Danfoss, General Electric collaborate to develop next-generation semiconductor materials
SiC power modules can reduce power consumption in electric cars by 10% and the energy consumption in data centers by 5%.
Danfoss Silicon Power, Germany, announced plans to join forces with General Electric (GE), Fairfield, Conn., to develop next-generation silicon-carbide (SiC) power modules.
The transatlantic collaboration between Danfoss and GE will be part of New York Power Electronics Manufacturing Consortium (NY-PEMC) in New York, which will focus on the development of next-generation semiconductor materials and packaging to enable the creation of smaller, faster and more efficient mobile devices.